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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package High collector breakdown voltage: VCEO=800V(Min) Excellent switching time: tr=1.0|I s(Max.) tf=1.0|I s(Max.@IC=0.8A APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION 2SC3148 Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IN Emitter PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current CHA E SEM NG Open base OND IC CONDITIONS TOR UC VALUE 900 800 7 3 5 1 UNIT V V V A A A Open emitter Open collector Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.5 W 40 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC3148 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A 0.6 V VBEsat Base-emitter saturation voltage IC=0.8A; IB=0.16A 1.2 V ICBO Collector cut-off current VCB=800V ;IE=0 100 |I A IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE DC current gain IC=0.8A ; VCE=5V 10 Switching times tr Rise time tstg tf IN Storage time Fall time CHA E SEM NG VCCO 400V; IC=0.8A IB1=0.08A;IB2=-0.20A; RL=50| ;Duty cycleU 1% OND IC TOR UC 1.0 |I s 4.0 |I s 1.0 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3148 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3148 CHA IN E SEM NG OND IC TOR UC 4 |
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